FDC658P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC658P
Datasheet:
Description:
MOSFETs SSOT-6 SMD/SMT P-Channel number of channels:1 1.6 W -30 V Continuous Drain Current (ID):-4 A 12 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 50 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -4 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 1.6 W |
| Threshold Voltage | -1.7 V |
| Number of Channels | 1 |
| Input capacitance | 750 pF |
| Continuous Drain Current (ID) | -4 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 24 ns |
| Element Configuration | Single |
| Rise Time | 14 ns |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 50 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 4577
Distributors
pcbx
pcbxUnit Price$0.53860
Ext.Price$0.53860
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.53860 | $0.53860 |
| 10 | $0.40524 | $4.05240 |
| 25 | $0.36382 | $9.09550 |
| 50 | $0.32663 | $16.33150 |
| 100 | $0.29324 | $29.32400 |
| 300 | $0.26162 | $78.48600 |
| 500 | $0.23340 | $116.70000 |
| 1000 | $0.20946 | $209.46000 |
| 3000 | $0.19236 | $577.08000 |
| 5000 | $0.16500 | $825.00000 |